Micross Deploys SWaP-Optimized Nuclear Event Detector

A COTS ASIC that triggers system protection in 3–5 nanoseconds during a high-dose event — Micross integrates differential line drivers on-chip, achieving massive SWaP reductions for drones, satellites, and ground vehicles in contested environments.

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Field Value
Date February 4, 2026
Region United States
Signal Type Technology
Confidence 5/5 — Detailed manufacturer technical release

What Happened

Micross announced the commercial release of a new Standard-Performance Nuclear Event Detector (NED) designed to safeguard mission-critical electronics against severe radiation dose rates.

Why It Matters

A nuclear detonation produces an intense, instantaneous pulse of prompt gamma and neutron radiation. This massive dose rate induces Transient Radiation Effects on Electronics (TREE) — photocurrents causing logic upset, data loss, or catastrophic latch-up. A NED is a hyper-fast dosimeter designed for instantaneous reaction: when it senses a rapid dose-rate spike, it fires a hardware interrupt triggering circumvention circuitry — forcing processors into a protected halt state, crowbarring power supplies, and saving state data to non-volatile memory before the full EMP propagates.

Legacy NED designs required extensive external supporting circuitry, including discrete differential line drivers. The new Micross NED integrates drivers directly onto the ASIC (manufactured at the DMEA-accredited Jazz Semiconductor Trusted Foundry), eliminating peripheral components. The device achieves 3–5 nanosecond reaction time at 20–50X overdrive, effectively doubling dose-rate sensitivity of previous iterations.

Operational Implications

An essential procurement signal for defense engineers designing next-generation UAS and LEO satellite constellations that demand high survivability but cannot afford weight penalties of traditional lead or tungsten shielding.

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